IXTC36P15P
IXTR36P15P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
ISOPLUS220 TM Outline
g fs
C iss
C oss
C rss
V DS = -10V, I D = -18A, Note 1
V GS = 0V, V DS = - 25V, f = 1MHz
11
19
2950
615
115
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = -18A
R G = 5 Ω (External)
V GS = -10V, V DS = 0.5 ? V DSS , I D = -18A
28
37
45
14
55
21
20
ns
ns
ns
ns
nC
nC
nC
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
R thJC
1.00 ° C/W
R thCS
Source-Drain Diode
0.15
° C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = -18A, V GS = 0V, Note 1
I F = - 25, -di/dt = -100A/ μ s
V R = -100V, V GS = 0V
150
2.0
- 36
-100
- 3.0
A
A
V
ns
μ C
Ref: IXYS CO 0177 R0
ISOPLUS 247 TM Outline
Note
1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
IXTR48P20P MOSFET P-CH 200V 30A ISOPLUS247
IXTR62N15P MOSFET N-CH ISOPLUS-247
IXTT100N25P MOSFET N-CH 250V 100A TO-268
IXTT110N10P MOSFET N-CH 100V 110A TO-268
IXTT120N15P MOSFET N-CH 150V 120A TO-268
IXTT16P60P MOSFET P-CH 600V 16A TO-268
IXTT170N10P MOSFET N-CH 100V 170A TO-268
IXTT1N100 MOSFET N-CH 1000V 1.5A TO-268
相关代理商/技术参数
IXTR40P50P 功能描述:MOSFET -22.0 Amps -500V 0.260 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR48P20P 功能描述:MOSFET -30.0 Amps -200V 0.093 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR62N15P 功能描述:MOSFET 62 Amps 150V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR90P10P 功能描述:MOSFET -57.0 Amps -100V 0.270 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR90P20P 功能描述:MOSFET -90.0 Amps -200V 0.048 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT02N450HV 制造商:IXYS Corporation 功能描述:MOSFET N-CH 4500V 200MA TO268 制造商:IXYS Corporation 功能描述:MOSFET 4500V 200mA HV Power MOSFET
IXTT100N25P 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT10N100D 功能描述:MOSFET 10 Amps 1000V 1.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube